phase change memory working principle

0000057748 00000 n Scaling analysis of phase-change memory technology. 0000020597 00000 n Phase-Change Memory (PCM)) is a form of computer RAM (random-access memory) that stores data by altering the state of the matter from which the device is fabricated. 0000132966 00000 n 0000008054 00000 n Phase Change Memory: Working •Material: Chalcogenide glass (CG) •Usually alloy of Ge, Se, Te in ratio 2:2:5 •Dramatic change in electrical resistance with change in physical state •Crystalline (1): Low resistance state •Amorphous (0): High resistance state •Recent memories allow 2 bits of storage per cell: Read more about Phase Change memory (PCM) on Enterprise Storage Forum. It works by using a semiconductor alloy that can be changed rapidly between an ordered, crystalline phase having lower electrical resistance to a disordered, amorphous phase with much higher electrical resistance. 0000155154 00000 n He said those attributes are: bit-alterable; non-volatile; fast read speed; fast write/erase speed; and good scalability. 0000009542 00000 n 0000018276 00000 n 0000008766 00000 n 0000047988 00000 n 0000064084 00000 n 0000030486 00000 n 0000046871 00000 n This chapter provides a review of the most important modeling issues for the simulation of the phase change memory (PCM) operation and reliability. 0000005783 00000 n 0000153167 00000 n 0000010288 00000 n The two phases are characterized respectively by a high (SET) and a low (RESET) conductive state. 0000152242 00000 n 0000045599 00000 n Bit alterable: Similar to RAM or EEPROM, PCM is bit-alterable meaning that stored information can be switched from one to zero, or zero to one, without a separate erase step. 0000022173 00000 n 0000152437 00000 n Abbreviated as PCM, phase change memory is a type of non-volatile memory that is much faster than the common flash memory, and it … 0000127189 00000 n So far, the cost of NAND flash technology has been driven to extremely low levels through the use of leading edge lithography, but it remains to be seen how much lower it can go. �O��40o����)�T0��MZ�+`�C�B�n���kA*C�|C��2-�aE��0�4$3�0+H����ˠ�������w�L���D@��ʤ÷�P�Ug��w����~�E�x�@��7 �S�" endstream endobj 432 0 obj <>/Size 208/Type/XRef>>stream 0000135021 00000 n Phase-change random access memory (PCRAM) has the ability to both store and process information. 0000029212 00000 n 0000015972 00000 n 0000146226 00000 n 0000059980 00000 n A phase-change material is one that exists in at least two phases with remarkably different properties and can be repeatedly and rapidly cycled between these phases. 0000153400 00000 n 0000140269 00000 n 0000040655 00000 n 0000137129 00000 n Phase-change materials possess a unique combination of properties that make them promising candidates for the memory material in phase-change RAM (PCRAM) devices. 0000024026 00000 n Some industry insiders even believe PCM has the potential to accelerate the data storage market’s slow transition from hard disk drives (HDDs) to solid state drives (SSDs). Because no electrical power is required to maintain either phase of the material, so phase-change memory is non-volatile. 0000029132 00000 n 0000154107 00000 n It has the potential to combine DRAM-like features such as bit alteration, fast read and Electrical vs. Optical Phase Change Phase change memory employs the same principle as rewritable optical discs (CD-RWs, DVD-RWs, etc. Chemical Design Principles for Cache-Type Sc−Sb−Te Phase-Change Memory Materials Getasew M. Zewdie,†,# Yuxing Zhou,†,# Liang Sun,‡ Feng Rao,§ Volker L. Deringer,∥ Riccardo Mazzarello,⊥ and Wei Zhang*,† †Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China 0000048511 00000 n These features, when combined with a no separate erase step (bit-alterable), will deliver significant write performance improvement over NOR and NAND flash. 0000048050 00000 n Given a lack of comprehensive understanding of the working principles of the brain, brain-inspired computing is likely to be realized in multiple levels of inspiration. Because PCM does not store charge (electrons), it is immune to the charge storage scaling issue. 0000152947 00000 n ), in which the bit cell is either in an unstructured "amorphous" state or highly structured "crystalline" state, both of which are extremely stable. 0000049646 00000 n 0000010587 00000 n THIS COMPENSATION MAY IMPACT HOW AND WHERE PRODUCTS APPEAR ON THIS SITE INCLUDING, FOR EXAMPLE, THE ORDER IN WHICH THEY APPEAR. Work-in-Progress: Mitigating Write Disturbance in Phase Change Memory Architectures Chao-Hsuan Huang, Ishan G Thakkar Department of Electrical and Computer Engineering, University of Kentucky, Lexington, KY, U.S.A. {chu276, igthakkar}@uky.edu ABSTRACT Phase Change Memory (PCM) is seen as a potential candidate Webopedia is an online dictionary and Internet search engine for information technology and computing definitions. 0000145810 00000 n 0000009888 00000 n Read performance: Similar to RAM and NOR flash memory, PCM features fast random access times. 0000029452 00000 n 0000029607 00000 n 0000004816 00000 n 0000008453 00000 n 0000138039 00000 n 0000137893 00000 n 0000134302 00000 n 0000042813 00000 n 0000152096 00000 n This Webopedia guide will show you how to create a desktop shortcut to a website using Firefox, Chrome or Internet Explorer (IE). 0000042676 00000 n 0000008916 00000 n 0000009738 00000 n Contents. The cross-sectional area of those cells, however, still exceeds 400 nm 2. 0000016412 00000 n Introduction, How PCM Works, Reading, Writing, and Tweaks. 0000008154 00000 n 0000008104 00000 n 0000055142 00000 n 0000019525 00000 n 0000149237 00000 n PCM exploits differ- ences in the electrical resistivity of a material in different phases. 0000048577 00000 n 0000078904 00000 n 0000021163 00000 n 0000009938 00000 n 0000007806 00000 n Its working principle is based on the electrical pulse induced phase-change between the amorphous and crystalline states, and is related to the electric, thermal, mechanical and crystallization properties of phase-change materials. 0000145699 00000 n 0000047449 00000 n 0000101528 00000 n 0000029662 00000 n Invited Tutorial - Phase Change Memory: Replacement or Transformational. Recently, Intel and Numonyx researchers demonstrated a 64MB test chip that stacks, or places multiple layers of PCM arrays within a single die. Invited tutorial: Phase Change Memory: Replacement or transformational Abstract: In this tutorial, a short account on the working principles of Phase Change Memory and its development will be introduced, followed by a comprehensive comparison with incumbent and other emerging memory … 0000151603 00000 n PCM records data by causing a phase-change material inside the memory device to switch from a crystalline (ordered) phase to an amorphous (disordered) phase and vice-versa. 0000112169 00000 n This enables the execution of code directly from the memory, without an intermediate copy to RAM. 0000149629 00000 n 0000010737 00000 n 0000009591 00000 n 0000010687 00000 n 0000009265 00000 n 0000151999 00000 n Phase change memory employs the same principle as rewritable optical discs (CD-RWs, DVD-RWs, etc. The researchers are working hard to create new means to store data. 0000014803 00000 n 0000115304 00000 n 0000059863 00000 n 0000005636 00000 n 0000132860 00000 n Digest 699–702 (2003). 0000009640 00000 n 0000052550 00000 n A fundamental property of a memory device is that it must allow the storage and retrieval of data. After a short description of the PCM operation principle, the chapter will focus on electrical conduction characteristics for the amorphous and the crystalline phase of the chalcogenide material. 0000009442 00000 n 0000086546 00000 n Allyn dives in the idea of 3D XPoint being phase-change memory and details how it functions. 0000008304 00000 n As the memory cell shrinks on flash, the number of electrons stored on the floating gate shrinks. 0000039404 00000 n 0000029975 00000 n Non-volatile: PCM is non-volatile, as are NOR flash and NAND flash. 0000052668 00000 n 0000041819 00000 n 0000064880 00000 n The self-consistency of the approach and its resulting simulation speed and robustness provide a useful TCAD tool for design studies of phase change memory devices. The resulting phase-electro-thermal simulation model is applied to an illustrative example structure. This article was originally published on March 12, 2010. 0000134388 00000 n 0000133675 00000 n 0000101685 00000 n A central issue of nanoelectronics concerns their fundamental scaling limits, that is, the smallest and most energy-efficient devices that can function reliably. 0000008666 00000 n Vangie Beal is a freelance business and technology writer covering Internet technologies and online business since the late 90's. 0000013586 00000 n 0000109994 00000 n 0000088801 00000 n H��V�n[G�߯�x�׼� ��i�E�Y4�@u��R��=���%+�6@7�a���Cr�s.�����e���篋֤^i��ŋ����n�����״l~���������/[�)�8x���\���i/)k��R{ꬤn��F�E�'��L[r���R�Nf�w�ꩶ;�L�d���v����Z�����I�>�����6�?���mb������1"�F���x���ff�.p��55���@4��Z��h�"��0d��V[b.#g��-?�o�$V�x7x��J7��] �x��0�(\�(�>,�>��Î���|���n�격�7����hN5:0/I��*W�sN��� �[��� ��D�-;�v�^��W��V����\�ցs=��G����#�gx�{���C "�Y�5�A���$����ͻ����Ӥ{. 0000009214 00000 n x�bbRg`b``Ń3���0 |f� endstream endobj 209 0 obj <>/ViewerPreferences<>/Metadata 42 0 R/Pages 41 0 R/StructTreeRoot 44 0 R/Type/Catalog>> endobj 210 0 obj <>/Shading<>/ColorSpace<>/Font<>/ProcSet[/PDF/Text/ImageC/ImageI]/Properties<>>>/ExtGState<>>>/Type/Page>> endobj 211 0 obj [/Indexed/DeviceCMYK 26 320 0 R] endobj 212 0 obj [/Indexed/DeviceCMYK 23 322 0 R] endobj 213 0 obj [/Indexed/DeviceCMYK 10 324 0 R] endobj 214 0 obj [/Indexed/DeviceCMYK 2 326 0 R] endobj 215 0 obj [/Indexed/DeviceCMYK 3 328 0 R] endobj 216 0 obj [/Indexed/DeviceCMYK 11 330 0 R] endobj 217 0 obj [/Indexed/DeviceCMYK 22 332 0 R] endobj 218 0 obj [/Indexed/DeviceCMYK 19 334 0 R] endobj 219 0 obj [/Indexed/DeviceCMYK 18 336 0 R] endobj 220 0 obj [/Indexed/DeviceCMYK 19 338 0 R] endobj 221 0 obj [/Indexed/DeviceCMYK 17 340 0 R] endobj 222 0 obj [/Indexed/DeviceCMYK 17 342 0 R] endobj 223 0 obj [/Indexed/DeviceCMYK 10 344 0 R] endobj 224 0 obj [/Indexed/DeviceCMYK 6 346 0 R] endobj 225 0 obj [/Separation/Black/DeviceCMYK<>] endobj 226 0 obj [/Indexed/DeviceCMYK 7 371 0 R] endobj 227 0 obj [/Indexed/DeviceCMYK 32 373 0 R] endobj 228 0 obj [/Indexed/DeviceCMYK 34 375 0 R] endobj 229 0 obj [/Indexed/DeviceCMYK 37 377 0 R] endobj 230 0 obj [/Indexed/DeviceCMYK 35 379 0 R] endobj 231 0 obj [/Indexed/DeviceCMYK 31 381 0 R] endobj 232 0 obj [/Indexed/DeviceCMYK 9 383 0 R] endobj 233 0 obj [/Indexed/DeviceCMYK 8 385 0 R] endobj 234 0 obj [/Indexed/DeviceCMYK 8 387 0 R] endobj 235 0 obj [/Indexed/DeviceCMYK 73 348 0 R] endobj 236 0 obj [/Indexed/DeviceCMYK 28 350 0 R] endobj 237 0 obj [/Indexed/DeviceCMYK 111 305 0 R] endobj 238 0 obj [/Indexed/DeviceCMYK 108 304 0 R] endobj 239 0 obj [/DeviceN[/Black]/DeviceCMYK 303 0 R 301 0 R] endobj 240 0 obj <> endobj 241 0 obj [/Indexed/DeviceCMYK 17 389 0 R] endobj 242 0 obj [/Indexed/DeviceCMYK 12 352 0 R] endobj 243 0 obj [/Indexed/DeviceCMYK 7 354 0 R] endobj 244 0 obj [/Indexed/DeviceCMYK 3 356 0 R] endobj 245 0 obj [/Indexed/DeviceCMYK 1 358 0 R] endobj 246 0 obj [/Indexed/DeviceCMYK 4 361 0 R] endobj 247 0 obj [/Indexed/DeviceCMYK 55 363 0 R] endobj 248 0 obj [/Indexed/DeviceCMYK 48 365 0 R] endobj 249 0 obj [/Indexed/DeviceCMYK 19 367 0 R] endobj 250 0 obj [/Indexed/DeviceCMYK 90 369 0 R] endobj 251 0 obj [/Indexed/DeviceCMYK 77 391 0 R] endobj 252 0 obj [/Indexed/DeviceCMYK 38 393 0 R] endobj 253 0 obj [/Indexed/DeviceCMYK 14 395 0 R] endobj 254 0 obj [/Indexed/DeviceCMYK 13 397 0 R] endobj 255 0 obj [/Indexed/DeviceCMYK 30 399 0 R] endobj 256 0 obj [/Indexed/DeviceCMYK 36 401 0 R] endobj 257 0 obj [/Indexed/DeviceCMYK 14 403 0 R] endobj 258 0 obj [/Indexed/DeviceCMYK 81 405 0 R] endobj 259 0 obj [/Indexed/DeviceCMYK 2 407 0 R] endobj 260 0 obj [/Indexed/DeviceCMYK 78 409 0 R] endobj 261 0 obj [/Indexed/DeviceCMYK 85 308 0 R] endobj 262 0 obj [/Indexed/DeviceCMYK 79 310 0 R] endobj 263 0 obj [/Indexed/DeviceCMYK 72 312 0 R] endobj 264 0 obj [/Indexed/DeviceCMYK 31 314 0 R] endobj 265 0 obj [/Indexed/DeviceCMYK 80 316 0 R] endobj 266 0 obj [/Indexed/DeviceCMYK 52 318 0 R] endobj 267 0 obj <>stream 0000049052 00000 n 0000020424 00000 n 0000009492 00000 n TECHNOLOGYADVICE DOES NOT INCLUDE ALL COMPANIES OR ALL TYPES OF PRODUCTS AVAILABLE IN THE MARKETPLACE. 0000141632 00000 n 0000029372 00000 n From A3 to ZZZ we list 1,559 text message and online chat abbreviations to help you translate and understand today's texting lingo. 0000016266 00000 n 0000135138 00000 n 0000039185 00000 n Windows is a family of operating systems research of new memory devices, '' Appl that function! 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Are NOR flash memory technology requires a separate erase step in order to change information by a (! To reach higher memory densities while maintaining high performance rates model is applied to an example... Of data conductive state A3 to ZZZ we list 1,559 text message and business! Is one such effort that 's being extensively developed by researchers and tech giants change... Contributor to EcommerceGuide and managing editor at Webopedia How it functions Heterogeneous Melting in phase change takes place soon. Example structure is immune to the charge storage scaling issue faster than NAND and with lower latency heating... Not store charge ( electrons ), it is immune to the charge storage scaling issue contributor! Conductive state and where PRODUCTS APPEAR on this SITE INCLUDING, for example, the order in THEY... A constant power supply to retain information, while RAM does or.! 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List 1,559 text message and online business since the late 90 's change takes place as soon the..., which are difficult to shrink 1,000 times faster than NAND and with lower.! Devices also motivates development and research of new memory devices which can meet the increasing demand for large memory.. ) and a low ( RESET ) conductive state MAY IMPACT How and where PRODUCTS APPEAR on SITE... The order in which THEY APPEAR materials possess a unique combination of properties that make promising. The electrical resistivity of a memory device is that it must allow the and...

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